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 September 1996
NDT014 N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
2.7A, 60V. RDS(ON) = 0.2 @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
_________________________________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
T A = 25C unless otherwise noted
NDT014 60 20
(Note 1a)
Units V V A
2.7 10
(Note 1a) (Note 1b) (Note 1c)
3 1.3 1.1 -65 to 150
W
TJ,TSTG
Operating and Storage Temperature Range
C
THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
C/W C/W
* Order option J23Z for cropped center drain lead.
(c) 1997 Fairchild Semiconductor Corporation
NDT014 Rev. C1
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ=125C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.6 A VDS = 25 V, ID = 1.6 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2 3 0.18 2 60 25 250 100 -100 V A A nA nA
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 4 0.2 V
S
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 155 60 15 pF pF pF
SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V, ID = 10 A, VGS = 10 V VDD =30 V, ID = 10 A, VGEN = 10 V, RGEN = 24 10 64 10 10 5 1.2 2 20 100 20 20 11 3.1 5.8 ns ns ns ns nC nC nC
NDT014 Rev. C1
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD trr
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time VGS = 0 V, IS = 2.7A
(Note 2)
2.7 22 0.95 1.6 140
A A V ns
VGS = 0 V, IF = 10 A, dIF/dt = 100 A/s
PD(t) =
R J A (t)
T J-TA
=
R J C CA +R (t)
T J-TA
= I 2 (t) x RDS(ON ) D
TJ
Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of 2oz copper. b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDT014 Rev. C1
Typical Electrical Characteristics
8
2.5
V
I D , DRAIN-SOURCE CURRENT (A)
GS
= 10V 8.0 7.0
DRAIN-SOURCE ON-RESISTANCE 2
VGS = 5.5V
6.0 6.5 7.0 8.0 10
6
6.5
4
R DS(on), NORMALIZED
6.0 5.5
1.5
2
1
5.0 4.5
0 0 1 V
DS
2 3 , DRAIN-SOURCE VOLTAGE (V)
4
0.5 0 2 4 6 I D , DRAIN CURRENT (A) 8 10
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50
3
DRAIN-SOURCE ON-RESISTANCE
V G S = 10V
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = 2.7A
2.5 2 1.5 1 0.5 0
VGS = 10 V
TJ = 125C
R DS(ON), NORMALIZED
25C -55C
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (C)
J
125
150
0
2 I
D
4 6 , DRAIN-CURRENT(A)
8
10
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
10 GATE-SOURCE THRESHOLD VOLTAGE
1.2
V DS = 10V
8 I D, DRAIN CURRENT (A)
TJ = -55C
25C 125C
1.1
V DS = V GS ID = 250A
V th , NORMALIZED
6
1
4
0.9
2
0.8
0 2 4 V
GS
6
8
10
0.7 -50
-25
, GATE TO SOURCE VOLTAGE (V)
0 25 50 75 100 T J , JUNCTION TEMPERATURE (C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDT014 Rev. C1
Typical Electrical Characteristics (continued)
1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE
10
I D = 250A
1.1 I S, REVERSE DRAIN CURRENT (A)
5
V GS = 0 V
, NORMALIZED
1 0.5
1.05
T J = 125C 25C
0.1
DSS
1
-55C
BV
0.95
0.01
0.9 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
0.001 0.2
0.4 V
SD
0.6
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
400 300
15
I D = 2.7A C iss
, GATE-SOURCE VOLTAGE (V) 12
VDS = 10V
20V
200 CAPACITANCE (pF)
40V
100
9
C oss
50 30 20
6
f = 1 MHz V GS = 0 V C rss
3
10 0.1
V 0 50 0
0.2
0.5
1
2
5
10
20
GS
1
2
3
4
5
6
V DS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on
t off tr
90%
t d(off)
90%
V IN
D
RL V OUT
VOUT
10%
tf
VGS
R GEN
10%
INVERTED
G
DUT 90% S
V IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDT014 Rev. C1
Typical Electrical Characteristics (continued)
4
20
, TRANSCONDUCTANCE (SIEMENS)
VDS = 1 0 V
3
T J = -55C 25C
ID , DRAIN CURRENT (A)
10 5 2 1 0.5
RD S( ON )L I T MI
10 1 m 0us s 10 10 1s 10 s DC m s s
125C
2
0m
1
0.1 0.05
VGS = 10V SINGLE PULSE RJ A = 42 o C/W TA = 25C
g 0 0 2 I
D
FS
4
6
8
10
0.01 0.1
0.2
, DRAIN CURRENT (A)
0.5 1 2 5 10 VDS , DRAIN-SOURCE VOLTAGE (V)
30
60
100
Figure 13. Transconductance Variation with Drain Current and Temperature.
Figure 14. Maximum Safe Operating Area.
1 0.5
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk)
0.2 0.1 0.05 0.02 0.01 0.005
R JA (t) = r(t) * R JA R JA = See Note 1 c
t1
t2
Single Pulse
TJ - TA = P * R
0.002 0.001 0.0001 0.001 0.01 0.1 t 1 , TIME (sec) 1 10
(t) JA Duty Cycle, D = t 1 / t 2
100 300
Figure 15. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design.
NDT014 Rev. C1
SOT-223 Tape and Reel Data and Package Dimensions
SOT-223 Packaging Configuration: Figure 1.0
Customized Label
Packaging Description:
SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
F63TNR Label Antistatic Cover Tape
Static Dissipative Embossed Carrier Tape
F852 014
SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.1246 0.7250 D84Z TNR 500 7" Dia 184x187x47 1,000 0.1246 0.1532
F852 014
F852 014
F852 014
SOT-223 Unit Orientation
343mm x 342mm x 64mm Intermediate box for Standard
F63TNR Label
F63TNR Label 184mm x 184mm x 47mm Pizza Box for D84Z Option
F63TNR Label sample
LOT: CBVK741B019 FSID: PN2222A QTY: 3000 SPEC:
SOT-223 Tape Leader and Trailer Configuration: Figure 2.0
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Carrier Tape Cover Tape
Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets
September 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SOT-223 (12mm)
A0
6.83 +/-0.10
B0
7.42 +/-0.10
W
12.0 +/-0.3
D0
1.55 +/-0.05
D1
1.50 +/-0.10
E1
1.75 +/-0.10
E2
10.25 min
F
5.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
1.88 +/-0.10
T
0.292 +/0.0130
Wc
9.5 +/-0.025
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOT-223 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
5.906 150 7.00 178
Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
Dim W2
0.724 18.4 0.724 18.4
Dim W3 (LSL-USL)
0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4
12mm
13" Dia
July 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 (FS PKG Code 47)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.


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